1 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. symbol maximum units t <= 10 sec 62.5 o c/w steady state 110 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja p & n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol n-channe l p-channe l units v ds 30 -30 v gs 20 -25 t a =25 o c 10 -8.5 t a =70 o c 8.1 -6.8 i dm 50 50 i s 2.3 -2.1 a t a =25 o c 2.1 2.1 t a =70 o c1.31.3 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a v ds (v) r ds(on) m( ? )i d (a) 20 @ v gs = 4.5v 8.4 16 @ v gs = 10v 10.0 33 @ v gs = -4.5v -6.8 23 @ v gs = -10v -8.5 30 product summary -30 esd protected 2000v d 2 p-channel mosfet d 1 g 1 n-channel mosfet s 1 g 1 s 2 g 2 1 2 3 4 soic-8 top view d 1 d 1 d 2 d 2 8 7 6 5 s 1 g 2 s 2
2 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. ch min typ max v gs = 0 v, i d = 250 ua n 30 v gs = 0 v, i d = -250 ua p -30 v gs = v ds , i d = 250 ua n 1 v gs = v ds , i d = -250 ua p -1 v gs = -20 v, v ds = 0 v p 10 v gs = 20 v, v ds = 0 v n 10 v ds = -24 v, v gs = 0 v p-1 v ds = 24 v, v gs = 0 v n 1 v ds = 5 v, v gs = 10 v n 20 v ds = -5 v, v gs = -10 v p -50 v gs = 10 v, i d = 10 a 16 v gs = 4.5 v, i d = 8.4 a 20 v gs = -10 v, i d = -8.5 a 23 v gs = -4.5 v, i d = -6.8 a 33 v ds = 15 v, i d = 10 a n 40 v ds = -15 v, i d = -9.5 a p 31 pulsed source current (body diode) a i sm 5 a n12 p13 n3.3 p5.8 n4.5 p12 n 20 p 15 n 9 p 16 n70 p62 n20 p46 forward tranconductance a g fs s total gate charge q g n-channel v ds =15v, v gs =4.5v, i d =10a p-channel v ds =-15v, v gs =-4.5v, i d =-10a nc limits unit specifications (t a = 25 o c unless otherwise noted) ua static te s t conditions v v symbol parame te r gate-threshold voltage v gs(th) drain-source breakdown voltage v (br)dss on-state drain current a i d(on) a gate-body leakage i gss ua i dss zero gate voltage drain current m ? drain-source on-resistance a r ds(on) n p ris e time ns n-chaneel v dd =15v, v gs =10v, i d =1a , r ge n =25 ? , p-channel v dd =-15v, v gs =-10v, i d =-1a r gen =15 ? fall-time t f turn-off delay time t d(on) t r t d(off) switching dynamic turn-on delay time gate-source charge q gs ga t e -dra in ch a rg e q gd
3 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a typical electrical characteristics (p-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage 0.1 1 10 100 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 v sd source to drain voltage (v) i source current (a) t j = 150 c t j = 25c figure 6. body diode forward voltage variation with source current and temperature 0 10 20 30 40 50 00.5 11.522.533.54 v ds (v) ids drain current (a) 3.5 3 4 v 4.5 v 5 v thr ough 10 v figure 1. on-region characteristics 0 0.008 0.016 0.024 0.032 0.04 0 10 20304050 i d drain current (a) rds(on) resistance ( ? ) v gs =10v v gs =4.5 v 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (c) normalized r ds (on) v gs = 10 v i d = 8 .5a 0 0.01 0.02 0.03 0.04 0.05 0.06 02 46 810 v gs gate to source voltage (v) r resist ance ( ? ) 0 10 20 30 40 50 60 0123456 v gs gate to so urce vo ltage (v) i d drain current (a) 25c 125c -55c v d =v g
4 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a typical electrical characteristics (p-channel) figure 11. transient th ermal response curve 0 500 1000 1500 2000 0 5 10 15 2 0 v ds (v) capacitance (pf) ciss coss crss figure 8. capacitance characteristics 0 5 10 15 20 25 30 35 40 45 50 0.001 0.1 10 1000 time(s) power (w) figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse .02 .05 .1 .2 .5 p dm t 1 t2 1. duty cycal d = t1/t2 2. p e r unit b a s e r ja =70c/w 3. t jm - t a = p dm z jc 4. s ure fa c e m o unte d square wave pulse duration (s) 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs (v) v d = 10v i d = 8.5a figure 7. gate charge characteristics 0.01 0.1 1 10 100 0.1 1 10 100 v ds drain to source voltage (v) i d current (a) 10 us 100 us 1ms 10ms 100ms 1 10s 100s dc i d limited r ds ( on) figure 9. maximum safe operating area
5 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a typical electrical characteristics (n-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 1. on-region characteristics 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (c) normalized r ds (on) v gs = 10v i d = 10a 0 10 20 30 40 50 60 0 1234 56 v gs gate to so urce vo ltage (v) i d drain current (a) 25c 12 5 c -55c v d =5v 0 10 20 30 40 50 00.511.52 vds, drain-source volt age (v) id, drain current (a) 3.0v 6.0v 4.0v v gs = 10v 0.5 0.8 1.1 1.4 1.7 2 0 1020304050 id, drain current (a) rds(on), normalized drain-source on-resistanc e 4.5v 10v 6.0v 0 0.01 0.02 0.03 0.04 0.05 246810 vgs, gate to source voltage (v) rds(on), on-resistance (ohm) i d = 10a t a = 25 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd, body diode forward voltage (v) is, reverse drain current (a) t a = 125 o c 25 o c v gs = 0v
6 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a typical electrical characteristics (n-channel) figure 11. transient th ermal response curve figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient square wave pulse duration (s) figure 7. gate charge characteristics figure 9. threshold vs ambient temperature 0 400 800 1200 1600 0 5 10 15 20 25 30 vds, drain to source voltage (v) capacitance (pf ) ciss crss coss f = 1mhz v gs = 0 v 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w ) single pulse rqja = 125c/w ta = 25c 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature ( o c) vth, gate-source thresthold voltag e (v) v ds = v gs i d = 250ma 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r qja (t) = r(t) * r qja r qja = 125 c/w t j - t a = p * r qja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0 2 4 6 8 10 0 4 8 12162024 qg, gate charge (nc) vgs gate to source voltage ( v ) i d =10a
7 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a package information so-8: 8lead h x 45
8 AM4502CE analog power preliminary publication order number: ds-AM4502CE_a ordering information ? AM4502CE-t1-xx ?a: analog power ? m: mosfet ? 4502: part number ? c: complementary ? e: esd protected ? t1: tape & reel ? xx: blank: standard pf: leadfree
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